Licensing Opportunities

USPTOnGimat has over 45 issued or allowed U.S. patents and numerous patent applications pending covering its raw materials, processes, equipment, composition of matter, intermediate products and final products. nGimat also has various patent applications pending in more than 15 countries worldwide. While almost all of the pending patents will be owned by nGimat, the industrial partners of nGimat also play a key role in enhancing intellectual property protection. Under strategic licensing arrangements, nGimat adopts a cross-fertilization framework that promotes a “win-win” mentality between nGimat and its partners. Specifically, an nGimat partner may be given exclusive rights to nGimat technology in a defined “field-of-use.” All nGimat intellectual property would be licensed to the partner in that field, including existing and future developments, regardless of the inventive source. Any spin-off developments resulting from the relationship, however, will benefit any and all other applications outside of the field. In this manner, nGimat and its partners benefit from the collective contributions of the Company’s alliances.

Beyond patents, nGimat is developing an intellectual property base that will include protection in the form of trade secrets, informational databases and registered and non-registered trademarks. The Company believes that its intellectual property base will provide a “cradle to grave” product protection, including operating procedures, engineering specifications, chemical solutions, proprietary process control software, equipment, material compositions, deposition nozzle design and manufacturing and end products.

nGimat is constantly evaluating its intellectual property portfolio to determine opportunities for technology licensing.

The  following patents are currently available for licensing:

  • US 6,270,835 B1 : Formation of thin film capacitors

Thin layer capacitors are formed from a flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by, or is facilitated by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Full text of this patent can be found here.

  • US 6,212,078 B1: Nanolaminated thin film circuitry materials

Nanolaminates are formed by alternating deposition, e.g., by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways running horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

Full text of this patent can be found here.